ALD Lab Dresden

Fraunhofer-Center Nanoelektronische Technologien (IPMS-CNT)

The ALD Lab Dresden is a collaboration of research institutes in Dresden applying and developing atomic layer deposition (ALD). ALD is a unique thin film deposition method which is based on alternating saturated surface reactions and thereby the film growth proceeds in a self-limiting manner. Due to the particular advantages like the simple and accurate control of the film thickness, the excellent uniformity and conformity as well as lower deposition temperatures compared to other methods (e.g. CVD, PVD) ALD has been implemented in high volume manufacturing for technologically advanced products and devices (e.g. DRAM, Advanced CMOS, and functional coatings).  

In ALD Lab Dresden the participating institutes have brought together their expertise and capabilities in ALD and beyond. Thus a unique competence centre in atomic layer deposition has been formed. Activities are ranging from fundamental research and precursor evaluation to large scale process development for novel materials for industrial coatings, future electronic devices and energy harvesting devices such as solar cells. 

Mission and Competences

  • • Head to head evaluation with conventional deposition techniques (Sol gel, PVD, CVD)
  • • Consultation and evaluation for Industry R&D projects
  • • Technology transfer to industry partners
  • • Novel ALD precursors, materials and technologies scaled up from laboratory to pilot production :
    • Environmental, safety and health (ESH)
    • Manufacturability
    • Productivity / Low cost of ownership


ALD Application Lab for:

  • • Rapid ALD precursor screening
  • • Fundamental research on nucleation and film growth
  • • Modeling and simulation for the optimization of equiqment and processes
  • • Materials research and development
    • High-k dielectrics and ferroelectrics
    • Metals and metal nitrides
    • Cu BEoL barrier/seed
    • Hardmasks for high aspect ratio etching
    • Backside passivation and transparent conductive oxides (TCO) for next generation photovoltaic devices

Technologies & Applications

  • • Thermal ALD, plasma enhanced ALD, thermal flash ALD and molecular layer deposition (MLD)
  • • Large Batch, shower head and cross flow ALD reactors
  • • Solid and liquid precursor vapourisation and injection systems
  • • In-situ metrology (QMS, QCM, Q-MACS, Ellipsometry, XPS, AFM, STM)
  • • Analytics


Applications

  • • Micro- and Nanoelectronic devices
  • • Diffusion barriers for organic electronics (OLED)
  • • Renewable energy sources, Energy storage and harvesting
  • • Industrial coatings for wear and corrosion protection
  • • Spintronic devices
  • • MEMS
  • • Antimicrobial coatings for soft materials
  • • Antifungal coatings
  • • Low friction coating for medical applications
  • • Filters, long experience of anodisation of aluminium to make filters and nano-structures

Atomic Layer Depostition Services

Substrate size: in most cases up to 300 mm 

Materials: Silicon, III/V, glass, ceramics, metal, polymer, moisture sensitive structures and devices


ALD oxides and dielectrics:
SiO2, liner, spacer, dopant, dielectric
SiNx, liner, spacer, dopant, dielectric
Al2O3, AlSiOx, AlTiOx, laminates, liner, spacer, dopant, passivation
NiOx, CuxO, thin-film solar, energy storage, spintronics, RRAM
ZrO2, ZrSiOx, ZrAlOx, ZrTiOx, laminates, capacitor dielectric, HKMG
HfO2, HfSiOx, HfAlOx, HfTiOx, HfZrOx, laminates, capacitor dielectric, HKMG
TiO2, capacitor dielectric, HKMG, Grätzel cell
SrO, SrTiOx, laminates, capacitor dielectric, HKMG
Hybride organic - inorganic


ALD metals and conductors
TiN, electrode, metal gate, barrier
TaN, TaCN, electrode, metal gate, barrier
Ni (ongoing development)
Co (ongoing development)
Cu (ongoing development)
ZnO, Al:ZnO transparent conductive oxides
Ru, RuO2 electrode, barrier, metal gate, seed
Ir, IrO2, electrode, metal gate


Member and Contacts

Fraunhofer-Center Nanoelektronische Technologien CNT


Fraunhofer-Institut für Keramische Technologien und Systeme IKTS


NaMLab gGmbH


Institut für Halbleiter- und Mikrosystemtechnik - TU Dresden


Fraunhofer-Institut für Photonische Mikrosysteme IPMS


Fraunhofer-Institut für Elektronische Nanosysteme ENAS


Nanexa AB


ALD Lab Dresden is partnering with:

EFDS - Europäische Forschungsgesellschaft Dünne Schichten e.V (European Society of Thin Films)

  • Prof. Winfried Blau
  • Phone: +49 3 51 8 71 83 70
  • Email: blau@efds.org

ALD History

GOAL: generate a common view on the early evolution of ALD in a collaborative project by the whole ALD community

UNKNOWNS: ALD done under the name Molecular Layering (ML) made in the Soviet Union starting from 1960’s

INVITATION TO PARTICIPATE: www.aldpulse.com/node/189, signed by Riikka L. Puurunen (VTT), Aziz Abdulagatov (NIST), Jonas Sundqvist (Fraunhofer IPMS-CNT), Annina Titoff (aldpulse.com)

  • • Anyone is welcome to join the project!
  • • How to participate? Read & comment on the significance of at least one historical publication that interests you. You may also help building a complete list of early publications here.
  • • Different backgrounds of the participants is beneficial
  • • Open for contributions until the end of 2013
  • • To be carried out in atmosphere of openness, respect and trust