Process Catalog
Fraunhofer-Center Nanoelektronische Technologien
Wet Etch/Clean
| Capability | FEoL/BEoL | Wafer size |
| Standard RCA clean: SC1 (hot/cold), SC2, DHF | FEoL | 300 |
| Piranha clean (resist strip, post etch clean): SPM, SOM, SOPM | FEoL | 300 |
| Oxide etch: DHF | FEoL | 300 |
| Amorphous Si etch: NH4OH | FEoL | 300 |
| Chemical oxidation: SC1 (hot/cold) | FEoL | 300 |
| Titannitride etch: SC1 (hot/cold) | FEoL | 300 |
| SiGe etch: SC1 (hot/cold) | FEoL | 300 |
| Standard single wafer cleaning: all kinds of acids, bases or water based cleaner, all BEoL materials, Capsule chamber | BEoL | 300 |
| Megasonic assited single wafer cleaning: all kinds of acids, bases or water based cleaner, BEoL materials, Megasonic chamber | BEoL | 300 |
| Spray single wafer cleaning: all kinds of acids, bases or water based cleaner, BEoL materials, spray chamber | BEoL | 300 |
| Backside singel wafer cleaning: all kinds of acids, bases or water based cleaner, all BEoL materials, backside clean chamber | BEoL | 300 |
| Standard diluted HF clean: different degree of dilutions possibe, 1:10 - 1:100 - 1:1000, all BEoL materials, different chambers | BEoL | 300 |
| Megasonic assisted single wafer cleaning: all kinds of solvent cleaner, all BEoL materials, Megasonic chamber 1 Mhz | BEoL | 300 |
| Spray single wafer cleaning: all kinds of solvent based cleaner, all BEoL materials, spray chamber | BEoL | 300 |
| Repair and surface treatment: all kinds of solvents or other chemical, all BEoL materials, developer chamber | BEoL | 300 |
| Repair and Surface treatment: all BEoL materials, Anneal chamber, IR flash anneal chamber, broad band UV chamber | BEoL | 300 |
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