Process Catalog

Fraunhofer-Center Nanoelektronische Technologien

Fraunhofer CNT Clean Room

Thin Films

Capability FEoL/BEoL Wafer size
ALD oxide    
ALD oxide SiO2, liner, spacer, dopant FEoL 200/300
ALD high-k Al2O3, AlSiOx, AlTiOx, laminates, liner, spacer, dopant FEoL 200/300
ALD high-k ZrO2, ZrSiOx, ZrAlOx, laminates, capacitor dielectric, HKMG FEoL 200/300
ALD high-k HfO2, HfSiOx, HfAlOx, HfZrOx, laminates, capacitor dielectric, HKMG FEoL 200/300
ALD high-k TiO2, capacitor dielectric, HKMG FEoL 200/300
ALD high-k SrO, SrTiOx, laminates, capacitor dielectric, HKMG FEoL 200/300
ALD high-k ZrO2, ZrSiOx, ZrAlOx, ZrTiOx, laminates, capacitor dielectric, HKMG FEoL 200/300
ALD high-k HfO2, HfSiOx, HfAlOx, HfTiOx, HfZrOx, laminates, capacitor dielectric, HKMG FEoL 200/300
ALD metal    
ALD metal Ru, electrode, barrier, seed FEoL 200/300
ALD metal nitride TiN, electrode, metal gate, barrier FEoL 200/300
ALD metal nitride TaN, electrode, metal gate, barrier FEoL 200/300
CVD    
CVD semiconductor a-Si, hardmask, liner, fill, electrode FEoL 200/300
CVD semiconductor a-SiGe (</= 35 at.% Ge), fill, electrode FEoL 200/300
CVD semiconductor Si, poly, fill, electrode FEoL 200/300
CVD/Epitaxy semiconductor epi Si, channel FEoL 200/300
CVD/Epitaxy semiconductor epi SiGe (</=25 at.% Ge), channel FEoL 200/300
CVD metal nitride TiN, electrode, metal gate, barrier FEoL 200/300 
CVD metal Co, barrier BEoL 300
CVD metal nitride TaN, barrier BEoL  300
PVD    
PVD metal nitride TaN, barrier BEoL 300
PVD metal Ta, barrier BEoL 300
PVD metal Cu, seed BEoL 300 
Other    
SoG oxide SiO2, hardmask, fill, resist FEoL/BEoL 200/300