Process Catalog

Fraunhofer-Center Nanoelektronische Technologien

Fraunhofer CNT Clean Room

Plasma Etch

Capability FEoL/BEoL Wafer size
Hardmask: Hardmask open & CD Trimming for SiO2, Si3N4, BARC, SiON, DLC, dielectric, CCP FEoL/BEoL 300
Interlayer Dielectrics: SiO2, low K, ULK, dielectric; CCP FEoL/BEoL 300
high-k functional stacks: Al2O3, AlSiOx, AlTiOx, ZrO2, ZrSiOx, ZrAlOx, HfO2, HfSiOx, HfAlOx, HfZrOx. TiO2, and combination as well as laminates of these materials, high-k, ICP, hot chuck FEoL 300
Deep Si etch: a-Si, c-Si, poly-Si, semiconductor, CCP FEoL 300
High Aspect Ratio Oxide Etch: SiO2; dielectric; CCP FEoL/BEoL 300
contact electrodes: W, WSi, TiN, TiSiN, TaN, TaCN, a-Si, poly-Si, Al; metal / metal nitride; CCP FEoL  300 
Shallow Trench etch: c-Si; semiconductor; CCP FEoL 300 
Resist Trim: Resist; CCP FEoL  300
Resist Strip: Resist; ICP remote, CCP FEoL/BEoL 300
Barrier open: SiN, SiCN, …; nitrides; CCP FEoL/BEoL  300