Process Catalog

Fraunhofer-Center Nanoelektronische Technologien

Fraunhofer CNT Clean Room

Metallization

Capability  FEoL/BEoL Wafer size
PVD    
PVD: TaN, liner BEoL 300
PVD: Ta, barrier BEoL 300
PVD: Cu, seed BEoL 300
CVD     
CVD: Co, barrier BEoL 300
CVD: TaN, liner BEoL 300
Electroplating    
Electroplating: Cu, dual damascene BEoL 300 
Electroplating: Cu, bumps/pillars BEoL 300
Electroplating: screening on coupons BEoL coupons
Clean: Cu, bevel etch BEoL 300
Anneal    
Hotplate Anneal: Cu, dual damascene BEoL 300
H2 Anneal: all BEoL, atmosphere/vacuum anneal BEoL 300 
N2 Anneal: all BEoL, atmosphere/vacuum anneal BEoL 300
N2H2 Anneal: all BEoL, atmosphere/vacuum anneal BEoL 300
Ar Anneal: all BEoL, atmosphere/vacuum anneal BEoL 300
Degas: H2, reduction BeoL 300 
CMP    
CMP: metal, Cu, dual damascene BEoL 300
CMP: barrier materials, Ta, TaN, dual damascene BEoL 300
CMP: dielectrics, SiO2, low-k, Si3N4, dual damascene, ILD CMP BEoL 300