Process Catalog
Fraunhofer-Center Nanoelektronische Technologien
Electrical Characterization/Reliability
| Capability | Application | Wafer size |
| Probing | ||
|
Fully automated probing from minus 55°C to 200°C, low noise |
Electrical characterization, PCM, reliability of wafers & full lots |
200/300 (< 200) |
| Semi-automated probing from minus 10°C to 200°C, low noise | Electrical characterization, Failure Analysis, Microprobing, RF-Probing, hot-spot analysis | any ≤300 |
| Capability | Application |
| Electrical characterization & Reliability | |
| Semiconductor device characterization | Transfer & output characteristics of transistors,
low noise leakage measurements on passive devices |
| LCR metering | Capacitance-voltage characteristics of active/passive devices |
| RF-Parameter measurements | Extraction of S-Parameters |
| Process control monitoring (PCM) | Electrical parameter measurements of wafers/lots |
| High-k / low-k material characterization with a fast dot-mask process loop (MIS & MIM) | Material & ALD-process characterization and optimization |
| Charge pumping investigation | Analysis of trap density |
| Random telegraph noise (RTN) characterization | Understanding of Vth fluctuation |
| TDDB analysis | device reliability |
| BTI analysis | device reliability |
| Non-volatile Memories (NVM) | |
| Characterization & Reliability analysis of stand-alone, embedded Flash product as well as memory test arrays and single memory cells. Supporting wafer-level and packaged device | Emerging and standard memory technologies (charge-trap, floating-gate, PCM, Fe-RAM,RRAM) |
| Optimization & characterization of memory operation parameters and sequences using analog/ mixed signal sequencer up to 36V and digital interface with DDR capability | Memory performance and reliability optimization |
| Program / erase characteristics | Memory performance and reliability optimization |
| Disturb analysis (program, erase & read disturb) | Memory performance and reliability optimization |
| NVM reliability (cycle endurance, retention) | Memory performance and reliability optimization |
| Special NVM & select device characterization (coupling, random telegraph noise, short channel effects) | Memory performance and reliability optimization |
| Electrical memory failure analysis | Failure analysis |
| Software environment, test definition, data processing | |
| PCM setup readiness within one day: Automated test execution based on versatile test-specification interface | All characterization & reliability measurement tasks |
| Central test execution and data collection: Networking of entire test equipment | Flexibility of tests. Generation of high statistic. Short setup-time |
| Customized data interface | Fast and versatile customization of data formats |
| Flexible and fast data-processing support. Automated data compression and report generation | Tables & plots with electrical parameters & characteristics, statistical analysis & Wafer maps |
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