Process Catalog

Fraunhofer-Center Nanoelektronische Technologien

Fraunhofer CNT Clean Room

Anneal

Capability FEoL/BEoL Wafer size
FURNACE    
N2 anneal: all FEoL incl. High-k, low pressure anneal FEoL 200/300
O2 anneal: all FEoL incl. High-k, low pressure anneal FEoL 200/300
H2 anneal: all FEoL incl. High-k, low pressure anneal FEoL 200/300
N2:H2 forming gas anneal: all FEoL incl. High-k, low pressure anneal FEoL 200/300
NH3 anneal: all FEoL incl. High-k, low pressure anneal FEoL 200/300
Cl2 treatment: all FEoL incl. High-k, low pressure anneal FEoL 200/300
NF3 treatment: all FEoL incl. High-k, low pressure anneal FEoL 200/300
Hotplate Anneal: metal, Cu, dual damascene BEoL 300
H2 Anneal: all BEoL materials, atmosphere, vacuum anneal BEoL 300
N2 Anneal: all BEoL materials, atmosphere, vacuum anneal BEoL 300
N2H2 Anneal: all BEoL materials, atmosphere, vacuum anneal BEoL 300
Ar Anneal: all BEoL materials, atmosphere, vacuum anneal BEoL 300
RTP    
Flash (miilisecond) anneal: all FEoL incl. High-k, metal silicides, dopant activation, silicidation FEoL 200/300
Spike anneal: all FEOL incl. High-k, metal silicides, dopant activation, silicidation FEoL 200/300
Soak anneal: all FEOL incl. High-k, metal silicides, dopant activation, silicidation FEoL 200/300