Microstructure Analysis

Fraunhofer-Center Nanoelektronische Technologien

Microstructural

X-Ray Diffraction (XRD) & X-Ray Reflectometry (XRR)

XRD
Influence of Si doping in 10nm thin Hf(1-x)SixO2 films on phase formation and crystallization temperature


XRD
Reciprocal space map around the (224) reflection of an exitaxial grown SiGe film


XRD
XRR analysis of multilayer stack
Applications
 
(GI)XRD

• Qualitative and quantitative phase determination, especially of ultra thin films
• Residual stress analysis
• Texture determination
• Determination of grain size
• High temperature XRD  for the investigation of crystallization processes and growth kinetics

XRR

• Layer thickness
• Density
• Roughness

 
Technical Specifications
 
• Bruker D8 Discover with Cu-Anode (40kV, 40mA)
• 3rd gen. Goebel mirror
• Different parallel plate collimators
• Scintillation counter and PSD (Vantec)
• ¼ circle Eulerian cradle
• mri BTS solid furnace with Be dome for high temperature experiments in chosen atmosphere (vac., N2, He)
 
Research Areas
 
Investigation of ultra thin film of high-k dielectric (down to 2nm):
• Layer thickness, density & roughness
• Phase composition
• Degree of crystallinity
• Thin film phase diagrams
 
  • Metallization layers
    • Phase compositon
    • Texture
    • Residual stress
    • Layer thickness
PCRAM materials (Ge2Sb2Te5)
• Simultaneous HTXRD/RS measurements
 
Epitaxial SiGe films