Microstructure Analysis
Fraunhofer-Center Nanoelektronische Technologien
Raman Spectroscopy
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- microscope map of STI-structure
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- stress map obtained by Raman microscopy with high compressive stressed regions (red) and tensile stressed regions (dark blue)
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- Stress map of silicon substrate used in solar cells, showing high compressive material (red) and relaxation of stress by crack formation (blue/green)
Optical measurements provide a comprehensive, fast and non destructive characterization of devices and structures for microelectronic, semiconductor or solar industry. By the means of Raman spectroscopy one can analyze vibrations in crystalline solids regarding their frequency, intensity and distribution. Hence it is possible to measure a number of properties, like stress, orientation, composition, film thickness, crystal structure and temperature, on different materials.
Applications
• Material and composition analysis with high spatial resolution
• Qualitative and quantitative measurement of stress and strain
• Determination of orientation,grain size,different phases
• Determination of local film thickness
• Local substrate temperature measurements
• UV-Raman for thin films
• Simultaneous AFM measurements
• Qualitative and quantitative measurement of stress and strain
• Determination of orientation,grain size,different phases
• Determination of local film thickness
• Local substrate temperature measurements
• UV-Raman for thin films
• Simultaneous AFM measurements
Technical Specifications
• InVia Reflex Raman microscope
• 3 different laser wavelengths + UV laser
• High spectral resolution (3000 lines grating, 2048 13.5µm pixel CCD)
• AFM scanning stage with sub-nanometer precision
• λ/2, λ/4 and polarizing filters
• 3 different laser wavelengths + UV laser
• High spectral resolution (3000 lines grating, 2048 13.5µm pixel CCD)
• AFM scanning stage with sub-nanometer precision
• λ/2, λ/4 and polarizing filters
Research Areas
Stress measurements in semiconductor samples
• Evaluation of process parameters, regarding stresses in films
• Quantitative stress values for Si, SiGe or III/V materials
• Detection of possible failure regions, damaged areas
• High lateral resolution stress maps
• Evaluation of process parameters, regarding stresses in films
• Quantitative stress values for Si, SiGe or III/V materials
• Detection of possible failure regions, damaged areas
• High lateral resolution stress maps
Composition and material analysis
• Composition of SiGe films
• Different phases in different materials (TiSi,CeO,ZrO,Si)
• Composition of SiGe films
• Different phases in different materials (TiSi,CeO,ZrO,Si)
Structure of carbon materials (carbon nanotubes, graphene, C60)
• Determination of graphene layers
• Determination of graphene layers
• Observation of C60-polymerization
• Physical propberties of carbon nanotubes
Different physical properties
• Local temperature in silicon substrates
• Grain orientation, size and distribution in poly-Si
• Local variation of film thicknesses
• Local temperature in silicon substrates
• Grain orientation, size and distribution in poly-Si
• Local variation of film thicknesses
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