TXRF is based on the detection of characteristic X-ray fluorescence radiation excited by a monochromatic primary X-ray beam. As the angle of incidence is kept below the critical angle of total external reflection, the sample is probed only an evanescent wave with a very limited penetration depth of a few nm. This method is used for qualitative compositional analysis at the sample surface for elements with an atomic number ≥11. It allows also for quantitative analysis (elemental ratios) for selected application and even absolute quantitative measurements are feasible. This method is highly sensitive with a LLD (lowest limit of detection) within down to 10¹⁰ at/cm². The major drawback of the method is that no localized information is achieved.

 

Technical Specification

 

• Bruker S2 Picofox with Mo-Anode (50kV, 750µA), monochromatized
• Si drift detector, Peltier cooled
• ADC 4096 channels
• Resolution: < 60eV @ Mn Kα 10kcps
• Incidence angle ≈ 0.06° (fixed)
• Sample holder diameter 30mm

   
Research Areas

 

• Contamination control
• Quantification of ALD and PVD grown ultra thin films