Compositional Analysis

Even a very small concentration of certain elements such as impurities or dopants may have a tremendous impact on the performance and functionality of semiconductor devices. To trace these elements, highly sensitive methods supplying additionally high lateral resolution are needed. Fraunhofer CNT offers 1D, 2D & 3D compositional analysis by means of various methods such as SIMS, EDX (TEM) and Atom Probe Tomography (APT) to meet the challenges. The latter method yields a 3D atomic map of a certain material volume containing the position and elemental information of up to a few 100 million atoms with sub-nm accuracy.