A DualBeam™ system (FEI Strata 400 STEM) is a unique precision machining tool that can be used for structure fabrication and modification, in addition, to gather microstructural information from the surface of the specimen with a high spatial resolution. FIB systems have revolutionized failure analysis in the semiconductor industry and are having an increasing impact on materials analysis in general.

Applications

• High resolution and High contrast imaging
• Cross-sectional imaging through semiconductor devices
• Failure Analysis
• Site specific specimens preparation for Transmission Electron Microscopy (TEM)
• Site specific specimens preparation for Atom Probe Tomography
• Nanofabrication and Microfabrication
• Circuit Modification
• Potential Contrast

Technical Specifications

FEI Dual Beam System Strata 400 STEM

Electron Source:	Schottky thermal field emitter
Ion source:	Gallium liquid metal
Beam voltage:	200 V - 30 kV SEM, 2 kV - 30 kV FIB
Image resolution:	< 1 nm achievable SEM-STEM mode
Sample types:	Wafer pieces, packaged parts, TEM half-grids
Flipstage:	Removable Row Holder holds up to six TEM grids
SEM-STEM detector Multi-region:	bright field, dark field, 12 high-angle dark field segments
Gas Injection Systems (GIS):	use Enhanced Etch™ for fast material removal with minimal redeposition, as well as metal deposition and insulator deposition materials.

Research Areas

Semiconducting Materials
• High-k dielectrics
• Contact Materials
• Metallization layers
• Metal-Insulator-Metal stacks

Engineering Materials

Hard coatings

Metallic glasses